Hot Carrier Photocurrent through MOS Structure
نویسندگان
چکیده
Flow of photocurrent through the metal-oxide-semiconductor structure induced by pulsed infrared CO2 laser is investigated experimentally. In case a perfect insulator, has photocapacitive character. Its rise based on hot carrier phenomenon; no generation present, only redistribution laser-heated carriers takes place at semiconductor surface. The magnitude this displacement current related to capacitance and dependent rate pulse change as well light intensity. This effect can find application in detection fast pulses development photovaractors. Operation such devices would not require cryogenic temperatures what usually needed long-wavelength technique.
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ژورنال
عنوان ژورنال: Applied sciences
سال: 2021
ISSN: ['2076-3417']
DOI: https://doi.org/10.3390/app11167211